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  underside view pin 1 ? emitter pad 2 ? base pad 3 ? collector features  silicon planar epitaxial npn transistor ? cecc screening options  space quality levels options  jan level screening options applications: intended for use in audio input stages, driver stages and low noise input applications. the to-18 (to-206aa) mechanical data dimensions in mm (inches) bcy59 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 5253 issue 1 absolute maximum ratings (t case = 25c unless otherwise stated) v ceo collector - emitter voltage (i b =0) 45v v beo emitter - base voltage (i c =0) 7v i c collector current 200ma p tot total power dissipation @ t amb 25 c 390mw @ t c 45 c 1w t j , t stg maximum junction and storage temperature -55c to 175c r jc thermal resistance junction to case 150c/w r ja thermal resistance junction to ambient 385c/w 1 3 2 2.54 (0.100) nom. 0.48 (0.019) 0.41 (0.016) dia. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min. semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions disc overed in its use. semelab encourages customers to verify that datasheets are current before placing orders. general purpose, small signal, npn transistor
bcy59 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 5253 issue 1 electrical characteristics (t case = 25 c unless otherwise stated) parameter test conditions min. typ. max. unit v (br) ceo* collector-emitter breakdown voltage i b =0 i c =2ma 45 v v (br) ebo emitter-base breakdown voltage i c =0 i e =10 a 7 v i ces collector cut-off current v ce =45v v be =0v 0.1 10 na t c =150 c 0.1 10 a i cex collector cut-off current (t c =100 c) v ce =45v v be = -0.2v 20 a i ebo emitter cut-off current i c =0 v eb =5v 10 na v be(sat) * base-emitter saturation voltage i c =10ma i b =0.25ma 600 700 850 i c =100ma i b =2.5ma 750 900 1200 mv v ce(sat) * base-emitter saturation voltage i c =10ma i b =0.25ma 120 350 i c =100ma i b =2.5ma 400 700 mv h fe dc current gain (bcy59 a ) i c =2ma v ce =5v 120 220 i c =10ma v ce =1v 80 i c =100ma v ce =1v 40 dc current gain (bcy59 b ) i c =10 a v ce =5v 20 i c =2ma v ce =5v 180 310 i c =10ma v ce =1v 120 400 i c =100ma v ce =1v 45 dc current gain (bcy59 c ) i c =10 a v ce =5v 40 i c =2ma v ce =5v 250 460 i c =10ma v ce =1v 160 630 i c =100ma v ce =1v 60 f t transition frequency (f=100mhz) i c =10ma v ce =5v 200 mhz c cbo collector-base capacitance (f=1mhz) i e =0 v cb =10v 3.5 6 c ebo emitter-base capacitance (f=1mhz) i c =0 v eb =0.5v 11 15 pf nf noise figure i c =200 a v ce =5v 2 6 db r s =2k ? f=1khz t on turn-on time (v cc =10v) i c =10ma i b1 =1ma 85 150 i c =100ma i b1 =10ma 55 150 ns t off turn-off time (v cc =10v) i c =10ma, i b1 = i b2 =1ma 480 800 i c =100ma, i b1 = i b2 =10ma 480 800 ns semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions disc overed in its use. semelab encourages customers to verify that datasheets are current before placing orders. * pulsed: pulse duration = 300s, duty cycle = 1.5%


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